Doplyth – Photolithographic Spin-On-Dopants

At Engistaff Semiconductor, we offer multiple Doplyth variants to provide semiconductor manufacturers with a precisely tailored spin-on doping solution for their unique fabrication needs. Different process nodes and lithography methods require fine-tuned formulations to achieve optimal doping efficiency, minimal diffusion variations, and high-resolution patterning, ensuring that every customer gets the best possible performance from their existing infrastructure.  

To streamline integration, Doplyth is categorized based on dopant type (N-type or P-type), dopant concentration levels for process flexibility, and wavelength compatibility (UV 365 nm or DUV 248 nm).

 

This approach allows fabs to eliminate unnecessary process adjustments, maximize efficiency, and achieve the highest level of precision and repeatability in doping applications, whether they require shallow junctions, high-dose implants, or low-diffusion control.

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Doplyth Product Matrix

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Each Doplyth variant is designed to provide precise and repeatable doping control, ensuring compatibility with different lithography wavelengths and process requirements.